Substrate treatment apparatus and manufacturing method of semiconductor device

ABSTRACT

A substrate treatment apparatus according to an embodiment includes: a tank configured to store a liquid chemical with which a plurality of substrates are treated; a piping having an ejection port that ejects the liquid chemical or bubbles into the tank; a plurality of rods that support the plurality of substrates in the tank; and a converter that is provided in the plurality of rods or the tank and that converts vibration applied to each substrate by the liquid chemical or the bubbles ejected from the piping into rotation in one direction around a center of the substrate as a rotational axis.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2020-142920, filed on Aug. 26, 2020; theentire contents of which are incorporated herein by reference.

FIELD

Embodiments of the present invention relate to a substrate treatmentapparatus and a manufacturing method of a semiconductor device.

BACKGROUND

One of steps of treating a substrate with a liquid chemical is anetching step in which the substrate is immersed in a high temperatureliquid chemical stored in a tank. In such an etching step, the liquidchemical is sometimes agitated in the tank by ejecting the liquidchemical or bubbles from the bottom part of the tank. In this case,since the flow speed of the liquid chemical is high near ejection ports,this possibly causes in-plane difference in etching amount over thesubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a substrate treatment apparatusaccording to a first embodiment;

FIG. 2 is a perspective view briefly showing a mode of supportingsemiconductor substrates;

FIG. 3 is a lateral view having a region A shown in FIG. 2 enlarged;

FIG. 4 is a perspective view having elastic bodies enlarged;

FIG. 5A is a plan view of a semiconductor device before etching;

FIG. 5B is a cross sectional view taken along the sectional line B-Bshown in FIG. 5A;

FIG. 6 is a cross sectional view of the semiconductor device after theetching;

FIG. 7A is an elevational view showing a state where a semiconductorsubstrate descends;

FIG. 7B is an elevational view showing a state where the semiconductorsubstrate rotates;

FIG. 7C is an elevational view showing a state where the semiconductorsubstrate rises;

FIG. 8 is a lateral view having the main part of a substrate treatmentapparatus according to a second embodiment enlarged;

FIG. 9 is a perspective view having projections enlarged;

FIG. 10A is an elevational view showing a state where vibration isapplied to a semiconductor substrate;

FIG. 10B is an elevational view showing a state where clockwise rotationof the semiconductor substrate is prevented;

FIG. 10C is an elevational view showing a state where the semiconductorsubstrate rotates counterclockwise;

FIG. 11 is an elevational view showing the main part of a substratetreatment apparatus according to a third embodiment;

FIG. 12 is a lateral view of a rod;

FIG. 13A is an elevational view showing a state where a semiconductorsubstrate floats;

FIG. 13B is an elevational view showing a state where the semiconductorsubstrate moves horizontally;

FIG. 13C is an elevational view showing a state where the semiconductorsubstrate rotates;

FIG. 14 is a schematic diagram schematically showing a configuration ofa substrate treatment apparatus according to a first modification;

FIG. 15 is an elevational view showing the main part of a substratetreatment apparatus according to a second modification;

FIG. 16 is an elevational view showing the main part of a substratetreatment apparatus according to a third modification; and

FIG. 17 is a perspective view showing the main part of a substratetreatment apparatus according to a fourth modification.

DETAILED DESCRIPTION

Embodiments will now be explained with reference to the accompanyingdrawings. The present invention is not limited to the embodiments.

A substrate treatment apparatus according to an embodiment includes: atank configured to store a liquid chemical with which a plurality ofsubstrates are treated; a piping having an ejection port that ejects theliquid chemical or bubbles into the tank; a plurality of rods thatsupport the plurality of substrates in the tank; and a converter that isprovided in the plurality of rods or the tank and that convertsvibration applied to each substrate by the liquid chemical or thebubbles ejected from the piping into rotation in one direction around acenter of the substrate as a rotational axis.

First Embodiment

FIG. 1 is a schematic diagram schematically showing a configuration of asubstrate treatment apparatus according to a first embodiment. Asubstrate treatment apparatus 1 shown in FIG. 1 is a batch-type wetetching treatment apparatus which collectively, selectively etchessilicon nitride films (not shown) formed on a plurality of semiconductorsubstrates 100 with a liquid chemical 200. The substrate treatmentapparatus 1 according to the present embodiment includes a tank 11,piping 12, a pump 13, and a plurality of rods 14 a to 14 c.

The tank 11 has an inner tank 111 and an outer tank 112. The inner tank111 stores the liquid chemical 200. In the present embodiment, the innertank 111 stores a high temperature phosphoric acid solution heated at150° C. to 170° C. The outer tank 112 recovers the liquid chemical 200that overflows from the inner tank 111.

The piping 12 communicates with a bottom part of the outer tank 112 anda bottom part of the inner tank 111 to circulate the liquid chemical 200between the inner tank 111 and the outer tank 112. The liquid chemical200 flowing out to the outer tank 112 is circulated back to the innertank 111 through ejection ports 12 a of the piping 12.

The pump 13 is provided on the piping 12. The pump 13 sucks the liquidchemical 200 from the outer tank 112 and pressurizes the sucked liquidchemical 200. Thereby, the liquid chemical 200 recovered in the outertank 112 is ejected into the inner tank 111 through the ejection ports12 a of the piping 12.

FIG. 2 is a perspective view briefly showing a mode of supporting thesemiconductor substrates 100. In the inner tank 111, the three rods 14 ato 14 c support the plurality of semiconductor substrates 100 arrangedinto a line in the Y-direction. The rods extend from a lifter 15 in theY-direction and can be formed, for example, of quartz. The rod 14 a andthe rod 14 b are arranged to be symmetric relative to a center axisextending through a center C of the semiconductor substrate 100 in theZ-direction. Moreover, the rod 14 c is arranged on the aforementionedcenter axis between the rod 14 a and the rod 14 b.

The lifter 15 is driven by a driver 16. The driver 16 is constituted,for example, of a motor, a drive circuit for the motor, and the like. Byelevating and lowering the lifter 15 in the Z-direction with the driver16, the semiconductor substrates 100 supported on the rods 14 a to 14 ccan be automatically carried in and carried out of the inner tank 111.

FIG. 3 is a lateral view having a region A shown in FIG. 2 enlarged. Asshown in FIG. 3, a plurality of recess portions 141 are provided alongthe Y-direction in the rod 14 b. The semiconductor substrates 100 areinserted into the respective recess portions 141 one by one. A pluralityof elastic bodies 142 are provided in a bottom part of each recessportion 141.

FIG. 4 is a perspective view having the elastic bodies 142 enlarged. Theplurality of elastic bodies 142 are arranged along the X-directionperpendicular to the Y-direction and the Z-direction in the bottom partof each recess portion 141. The elastic bodies 142 are formed of elasticmaterials such as fluorine resin or rubber into a shape of fins.

Moreover, the elastic bodies 142 are inclined in a rotational directionfrom their lower end parts toward their upper end parts in order torotate the semiconductor substrate 100 in one direction around arotational axis which passes through its center C and extends in theY-direction. The recess portions 141 and the elastic bodies 142 are alsoprovided in the rod 14 a and the rod 14 c as well as in the rod 14 b.

Hereafter, steps of manufacturing a semiconductor device using thesubstrate treatment apparatus 1 according to the present embodiment aredescribed. Specifically, steps of manufacturing a three-dimensionallystacked semiconductor storage device in which electrode layers arestacked are partially described.

FIG. 5A is a plan view of a semiconductor device before etching. FIG. 5Bis a cross sectional view taken along the sectional line B-B shown inFIG. 5A. FIG. 6 is a cross sectional view of the semiconductor deviceafter the etching.

As shown in FIG. 5B, silicon nitride films 101 and silicon oxide films102 are alternately stacked on the semiconductor substrate 100. Astacked body composed of the silicon nitride films 101 and the siliconoxide films 102 is segmented by a slit 103. Moreover, a plurality ofcolumnar memory films 104 are formed in the stacked body.

When the driver 16 drives the lifter 15 to immerse the semiconductorsubstrate 100 in the liquid chemical 200 stored in the inner tank 111,the liquid chemical 200 infiltrates into the stacked body through theslit 103. As a result, as in the cross sectional view shown in FIG. 6,the silicon nitride films 101 are selectively etched relative to thesilicon oxide films 102. After completion of the etching of the siliconnitride films 101, the semiconductor substrate 100 is carried out of theinner tank 111 by the lifter 15. After that, conductive films, forexample, containing tungsten (W) are deposited in portions obtained byetching the silicon nitride films 101. A part of the conductive filmsfunction as word lines.

Hereafter, motion of the semiconductor substrate 100 during theaforementioned etching of the silicon nitride films 101 is describedwith reference to FIG. 7A to FIG. 7C.

In the inner tank 111, flows of the liquid chemical 200 are generatedbetween the bottom part and the upper part of the inner tank 111 byejecting the liquid chemical 200 from the ejection ports 12 a of thepiping 12 (see FIG. 1). The flows of the liquid chemical 200 firstlycause, as shown in FIG. 7A, downward force in the vertical direction tobe exerted on the semiconductor substrate 100.

When the aforementioned force lowers the outer circumferential part ofthe semiconductor substrate 100 down to a position where the outercircumferential part comes into contact with the elastic bodies 142, theinclinations of the elastic bodies 142 cause the semiconductor substrate100 to rotate along the inclinations of the elastic bodies 142 in adirection R as shown in FIG. 7B.

Next, as shown in FIG. 7C, upward force in the vertical directiongenerated by the flows of the liquid chemical 200 elevates thesemiconductor substrate 100. In this stage, the elastic bodies 142 areelastically deformed back to have the shapes shown in FIG. 7A. Therotation of the semiconductor substrate 100 shown in FIG. 7A to FIG. 7Cis repeated afterward.

According to the present embodiment described above, a convertercomposed of the recess portions 141 and the elastic bodies 142 providedin the rods 14 a to 14 c converts vibration in the vertical directionapplied to the semiconductor substrates 100 by the flows of the liquidchemical 200 into rotation of the semiconductor substrates 100 aroundthe center C as the rotational axis. This consequently makes the flowsof the liquid chemical 200 even since the whole surfaces of thesemiconductor substrates 100 periodically pass through the vicinities ofthe ejection ports 12 a where the flow speed of the liquid chemical 200is high. Therefore, the silicon nitride films 101 are evenly etched overthe semiconductor substrates 100.

Moreover, in the present embodiment, the semiconductor substrates 100are rotated by a simple mechanism including the recess portions 141 andthe elastic bodies 142, not by a large-scale mechanism such as a motor.Accordingly, it can be easy to improve in-plane evenness of a liquidchemical treatment of the semiconductor substrates 100.

Notably, in the present embodiment, the driver 16 may vibrate the lifter15 in the vertical direction (Z-direction) and the horizontal direction(X-direction) during the etching treatment. In this case, since thedriver 16 can adjust the amplitude and the frequency of the vibration ofthe semiconductor substrates 100, controllability of rotary motion ofthe semiconductor substrates 100 is improved.

Second Embodiment

A second embodiment is hereafter described. The present embodiment isdifferent from the first embodiment in the structure of the rods 14 a to14 c. Therefore, its differences from the first embodiment are hereaftermainly described.

FIG. 8 is a lateral view having the main part of a substrate treatmentapparatus according to the second embodiment enlarged. FIG. 8corresponds to the enlarged view of the region A shown in FIG. 2. Asshown in FIG. 8, in the rod 14 b according to the present embodiment,the plurality of recess portions 141 are provided along the Y-directionsimilarly to the first embodiment, and meanwhile, a plurality ofprojections 143 are provided in the bottom part of each recess portion141.

FIG. 9 is a perspective view having the projections 143 enlarged. Theplurality of projections 143 are arranged along the X-direction in thebottom part of each recess portion 141. The projections 143 are formedof quartz or the like having durability against the liquid chemical 200into a shape of a mountain range, for example. Moreover, inclinedsurfaces (ridges) of the projections 143 are inclined in the rotationaldirection in order to rotate the semiconductor substrates 100 in onedirection. The projections 143 are also provided in the rod 14 a and therod 14 c as well as in the rod 14 b.

By the substrate treatment apparatus according to the presentembodiment, the silicon nitride films 101 can also be selectively etchedas described for the first embodiment. Hereafter, motion of thesemiconductor substrate 100 during the aforementioned etching of thesilicon nitride films 101 is described with reference to FIG. 10A toFIG. 10C.

When the outer circumferential part of the semiconductor substrate 100is in contact with top parts (tip parts) of the projections 143, theflows of the liquid chemical 200 generated between the bottom part andthe upper part of the inner tank 111 cause vibration in the horizontaldirection or the vertical direction to be applied to the semiconductorsubstrate 100 as shown in FIG. 10A.

When the aforementioned vibration is applied to the semiconductorsubstrate 100, since the inclined surfaces of the projections 143 areinclined in the one direction, rotation of the semiconductor substrate100 in a clockwise direction R1 reverse to the one direction isprevented as shown in FIG. 10B. Meanwhile, as shown in FIG. 10C, theprojections 143 promote rotation of the semiconductor substrate 100 in acounterclockwise direction R2 same as the one direction. As above, therotation of the semiconductor substrate 100 in the counterclockwisedirection R2 is repeated.

According to the present embodiment described above, a convertercomposed of the recess portions 141 and the projections 143 provided inthe rods 14 a to 14 c converts vibration in the vertical direction orthe horizontal direction applied to the semiconductor substrates 100 bythe flows of the liquid chemical 200 into rotation of the semiconductorsubstrates 100 around the center C as the rotational axis. Thisconsequently makes the flows of the liquid chemical 200 even since thewhole surfaces of the semiconductor substrates 100 periodically passthrough the vicinities of the ejection ports 12 a where the flow speedof the liquid chemical 200 is high. Therefore, the silicon nitride films101 are evenly etched over the semiconductor substrates 100.

Moreover, also in the present embodiment, the aforementioned converterhas a simple configuration including the recess portions 141 and theprojections 143. Accordingly, it can be easy to improve in-planeevenness of a liquid chemical treatment of the semiconductor substrates100.

Third Embodiment

A third embodiment is hereafter described. The present embodiment isdifferent from the first embodiment in the arrangement of the rods 14 ato 14 c. Therefore, its differences from the first embodiment arehereafter mainly described.

FIG. 11 is an elevational view showing the main part of a substratetreatment apparatus according to the third embodiment. In FIG. 11, thecomponents of the substrate treatment apparatus other than the rods 14 ato 14 c are omitted from the illustration.

As shown in FIG. 11, in the present embodiment, the rod 14 a and the rod14 b are arranged to be asymmetric relative to the center axis whichpasses through the center C of the semiconductor substrate 100 andextends in the Z-direction. Moreover, the rod 14 c is arranged at aposition displaced from the aforementioned center axis between the rod14 a and the rod 14 b. Namely, the linear distance from the rod 14 a tothe rod 14 c is different from the linear distance from the rod 14 b tothe rod 14 c.

The arrangement and the configuration as above allow two rods of the rod14 a to the rod 14 c to support the semiconductor substrate 100simultaneously. It should be noted that the rod 14 a and the rod 14 bsupport the semiconductor substrate 100 at different times and the rod14 c supports the semiconductor substrate 100 simultaneously with one ofthe rod 14 a and the rod 14 b.

FIG. 12 is a lateral view of the rods 14 a to 14 c. In the rods 14 a to14 c shown in FIG. 12, the recess portions 141 described for the firstembodiment are formed, and meanwhile, the elastic bodies 142 are notformed.

The substrate treatment apparatus according to the present embodimentcan also selectively etch the silicon nitride films 101 described forthe first embodiment. Hereafter, motion of the semiconductor substrate100 during the aforementioned etching of the silicon nitride films 101is described with reference to FIG. 13A to FIG. 13C.

When an upward flow of the liquid chemical 200 in the vertical directionis generated in the inner tank 111 when the rod 14 a and the rod 14 care in contact with the outer circumferential part of the semiconductorsubstrate 100 (see FIG. 11), the semiconductor substrate 100 floats (iselevated), as shown in FIG. 13A, to such an extent that it does notescape from the recess portion 141. In this stage, a horizontal motionof the semiconductor substrate 100 in the −X-direction (to the left inFIG. 13A) is prevented by the rod 14 a. Therefore, as shown in FIG. 13B,the semiconductor substrate 100 horizontally moves in the +X-direction(to the right in FIG. 13A) and is to be supported on the rod 14 b andthe rod 14 c.

Since the distance between the rod 14 b and the rod 14 c is shorter thanthe distance between the rod 14 a and the rod 14 c, the semiconductorsubstrate 100 becomes unstable. This causes the semiconductor substrate100 to rotate in the direction R and to be supported again on the rod 14a and the rod 14 c. The rotation of the semiconductor substrate 100shown in FIG. 13A to FIG. 13C is repeated afterward.

According to the present embodiment described above, a convertercomposed of the three rods 14 a to 14 c converts vibration in thevertical direction applied to the semiconductor substrates 100 by theflows of the liquid chemical 200 into rotation of the semiconductorsubstrates 100 while their motion in the horizontal direction occursbetween the vibration and the rotation. This consequently makes theflows of the liquid chemical 200 even since the whole surfaces of thesemiconductor substrates 100 periodically pass through the vicinities ofthe ejection ports 12 a where the flow speed of the liquid chemical 200is high. Therefore, the silicon nitride films 101 are evenly etched overthe semiconductor substrates 100.

Moreover, in the present embodiment, the elastic bodies 142 do not needto be provided in the bottom parts of the recess portions 141 of therods. Accordingly, the converter which converts the vibration of thesemiconductor substrates 100 into the rotation can be simpler.

(First Modification)

FIG. 14 is a schematic diagram schematically showing a configuration ofa substrate treatment apparatus according to a first modification. Itssimilar components to those of the substrate treatment apparatus 1 shownin FIG. 1 are given the same signs and their detailed description isomitted.

A substrate treatment apparatus 1 a according to the presentmodification further includes piping 17 (second piping) and a bubblegenerator 18 in addition to the aforementioned components of thesubstrate treatment apparatus 1. Ejection ports 17 a communicating withthe inner tank 111 are provided on one side of the piping 17. Theejection ports 17 a are arranged in the bottom part of the inner tank111 similarly to the ejection ports 12 a on the piping 12 (firstpiping). Note that the number of ejection ports 17 a is not speciallylimited while FIG. 14 shows the four ejection ports 17 a.

The bubble generator 18 causes nitrogen gas to flow into the piping 17.Ejection of this nitrogen gas from the ejection ports 17 a generatesbubbles 300 in the liquid chemical 200. Since the bubbles 300 along withthe liquid chemical 200 ejected from the ejection ports 12 a agitate theliquid chemical 200 in the inner tank 111, the semiconductor substrates100 easily vibrate. The vibration of the semiconductor substrates 100 isconverted into rotation of the semiconductor substrates 100 by any ofthe converters which have been described for the first embodiment to thethird embodiment and are provided in the rods 14 a to 14 c (the recessportions 141, the elastic bodies 142, the projections 143).

In the present modification, the bubble generator 18 may regulate gasflow rates. For example, when the gas flow rates are raised in the orderfrom the ejection port 17 a that is arranged on the left side in FIG. 14to the ejection port 17 a that is arranged on the right side in FIG. 14,the semiconductor substrates 100 can easily rotate in the direction Rsince more bubbles 300 are generated in the ejection port 17 a on theright side.

According to the present embodiment described above, the bubblegenerator 18 generates the bubbles 300 in the liquid chemical 200, andthereby, can assist the vibration of the semiconductor substrates 100.Moreover, the bubble generator 18 may control places where the bubbles300 are generated, and thereby, can also assist the rotation of thesemiconductor substrates 100.

(Second Modification)

FIG. 15 is an elevational view showing the main part of a substratetreatment apparatus according to a second modification. A substratetreatment apparatus 1 b according to the present modification furtherincludes rods 14 c to 14 e. Note that the substrate treatment apparatus1 b does not need to include all the rods of the rods 14 c to 14 e andmay include at least one of these rods. In FIG. 15, the components ofthe substrate treatment apparatus 1 b other than the rods 14 a to 14 eare omitted from the illustration.

The rods 14 c to 14 e have the same structures as those of the rods 14 ato 14 c described for the first embodiment or the second embodiment.Namely, the plurality of recess portions 141 are formed in the rods 14 cto 14 e, and the plurality of elastic bodies 142 or the plurality ofprojections 143 are provided in the bottom part of each recess portion141.

The rod 14 c and the rod 14 d are provided on inner surfaces 111 a ofthe inner tank 111, and face each other in the X-direction. Meanwhile,the rod 14 e is provided on a lid part 111 b of the inner tank 111, andfaces the rod 14 c in the Z-direction. When the outer circumferentialpart of the semiconductor substrate 100 comes into contact with theelastic bodies 142 or the projections 143 provided in the rods 14 c to14 e, the elastic bodies 142 or the projections 143 rotate thesemiconductor substrate 100 in the direction R.

Therefore, according to the present modification, the number ofconverters which convert the vibration of the semiconductor substrate100 into the rotation thereof increases more than in the firstembodiment and in the second embodiment. The semiconductor substrate 100thereby rotates more smoothly and it is possible to improve evenness ofthe liquid chemical treatment more.

(Third Modification)

FIG. 16 is an elevational view showing the main part of a substratetreatment apparatus according to a third modification. In FIG. 16, thecomponents of the substrate treatment apparatus other than the rods 14 ato 14 c are omitted from the illustration.

In the present modification, similarly to the third embodiment, the rod14 a and the rod 14 b are arranged to be asymmetric relative to thecenter C of the semiconductor substrate 100. Moreover, the rod 14 c isarranged at a position displaced from the aforementioned center axisbetween the rod 14 a and the rod 14 b. Namely, the linear distance fromthe rod 14 a to the rod 14 c is different from the linear distance fromthe rod 14 b to the rod 14 c.

It should be noted that in the present modification, the height(distance in the Z-direction) from the rod 14 c to the rod 14 a isdifferent from the height from the rod 14 c to the rod 14 b. Also withsuch an arrangement and a configuration, the rod 14 a and the rod 14 bout of the rod 14 a to the rod 14 c can support the semiconductorsubstrate 100 at different times and the rod 14 c can support thesemiconductor substrate 100 simultaneously with one of the rod 14 a andthe rod 14 b.

Accordingly, also in the present modification, similarly to the thirdembodiment, the rod 14 a to the rod 14 c can convert vibration in thevertical direction applied to the semiconductor substrates 100 intorotation of the semiconductor substrates 100 while their motion in thehorizontal direction occurs between the vibration and the rotation. Thiscan make the liquid chemical treatment of the surfaces of thesemiconductor substrates 100 even.

(Fourth Modification)

FIG. 17 is a perspective view showing the main part of a substratetreatment apparatus according to a fourth modification. According to theaforementioned third embodiment, the semiconductor substrates 100 aresupported by two rods. This tends to cause the semiconductor substrates100 to be unstably supported.

Therefore, in the present modification, as shown in FIG. 17,slip-resistant sheets 19 are pasted on parts of outer circumferentialsurfaces of the columnar rods 14 a to 14 c. The slip-resistant sheets 19are formed of materials larger in frictional coefficient than those ofthe rods 14 a to 14 c. Thereby, the semiconductor substrates 100 and thecontact portions of the rods 14 a to 14 c scarcely slip on each other.

Therefore, according to the present modification, stability insupporting the semiconductor substrates 100 is improved, and hence, thesemiconductor substrates 100 are allowed to move smoothly, horizontallyand rotationally.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

1. A substrate treatment apparatus comprising: a tank configured tostore a liquid chemical with which a plurality of substrates aretreated; a piping having an ejection port that ejects the liquidchemical or bubbles into the tank; a plurality of rods that support theplurality of substrates in the tank; and a converter that is provided inthe plurality of rods or the tank and that converts vibration applied toeach substrate by the liquid chemical or the bubbles ejected from thepiping into rotation in one direction around a center of the substrateas a rotational axis.
 2. The substrate treatment apparatus according toclaim 1, wherein the converter includes a plurality of recess portionsprovided along an arrangement direction of the plurality of substratesin each rod, and a plurality of elastic bodies provided in a bottom partof each recess portion and inclined in the one direction, the elasticbodies being in a shape of fins.
 3. The substrate treatment apparatusaccording to claim 1, wherein the converter includes a plurality ofrecess portions provided along an arrangement direction of the pluralityof substrates in each rod, and a plurality of projections provided in abottom part of each recess portion and inclined in the one direction,the projections being in a shape of a mountain range.
 4. The substratetreatment apparatus according to claim 1, wherein the converter includesa first rod that is one of the plurality of rods, a second rod that isarranged to be asymmetric with respect to the first rod relative to acenter of the substrate and supports the plurality of substrates at adifferent time from that when the first rod does, and a third rod thatis arranged between the first rod and the second rod and supports theplurality of substrates simultaneously with one of the first rod and thesecond rod.
 5. The substrate treatment apparatus according to claim 1,wherein the piping has first piping that ejects the liquid chemical andsecond piping that ejects the bubbles, and a bubble generator thatgenerates the bubbles is connected to the second piping.
 6. Thesubstrate treatment apparatus according to claim 1, wherein one or someof the plurality of rods are provided on an inner surface or a lid partof the tank.
 7. The substrate treatment apparatus according to claim 4,wherein a linear distance from the first rod to the third rod isdifferent from a linear distance from the second rod to the third rod.8. The substrate treatment apparatus according to claim 4, wherein aslip-resistant sheet is pasted on a part of an outer circumferentialsurface of each of the first rod, the second rod and the third rod.
 9. Amanufacturing method of a semiconductor device, comprising: immersing aplurality of substrates in a liquid chemical stored in a tank; ejectingthe liquid chemical or bubbles into the tank; and etching a film formedon the substrate while converting vibration applied to each substrate bythe ejected liquid chemical or bubbles into rotation in one directionaround a center of the substrate as a rotational axis.
 10. Themanufacturing method of a semiconductor device according to claim 9,comprising: supporting the plurality of substrates on a plurality ofrods; and converting the vibration into the rotation in the onedirection using a plurality of recess portions provided along anarrangement direction of the plurality of substrates in each rod and aplurality of elastic bodies provided in a bottom part of each recessportion and inclined in the one direction, the elastic bodies being in ashape of fins.
 11. The manufacturing method of a semiconductor deviceaccording to claim 9, comprising: supporting the plurality of substrateson a plurality of rods; and converting the vibration into the rotationin the one direction using a plurality of recess portions provided alongan arrangement direction of the plurality of substrates in each rod anda plurality of projections provided in a bottom part of each recessportion and inclined in the one direction, the projections being in ashape of a mountain range.
 12. The manufacturing method of asemiconductor device according to claim 9, wherein the plurality ofsubstrates is supported on a first rod, a second rod and a third rod,the second rod is arranged to be asymmetric with respect to the firstrod relative to the center of the substrate and supports the pluralityof substrates at a different time from that when the first rod does, andthe third rod is arranged between the first rod and the second rod andsupports the plurality of substrates simultaneously with one of thefirst rod and the second rod.
 13. The manufacturing method of asemiconductor device according to claim 9, wherein the liquid chemicalis ejected from first piping, and the bubbles are ejected from secondpiping different from the first piping.
 14. The manufacturing method ofa semiconductor device according to claim 9, wherein rods provided on aninner surface or a lid part of the tank support the plurality ofsubstrates.
 15. The manufacturing method of a semiconductor deviceaccording to claim 12, wherein the rods are arranged such that a lineardistance from the first rod to the third rod is different from a lineardistance from the second rod to the third rod.
 16. The manufacturingmethod of a semiconductor device according to claim 12, wherein aslip-resistant sheet is pasted on a part of an outer circumferentialsurface of each of the first rod, the second rod and the third rod.